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Research School of Physical Sciences and Engineering
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Semiconductor Physics and Devices![]() RSPhysSE has two operational MOCVD growth systems and a vast suite of associated diagnostic and device fabrication facilities devoted to the design, growth and testing of novel III-V semiconductor devices. Much of this activity has linkages to commercial device manufacturers and focuses on emitters and detectors of importance to the telecommunications industry. Recent developments include novel nanoscale fibre lasers grown vertically from wafer surfaces, high power quantum well edge emitting lasers and quantum dot detectors. The School also has a number of ion accelerators devoted to semiconductor research, the largest of which is an 1.7MeV tandem accelerator primarily use to modify the electrical and mechanical characteristics of semiconductors. There is special interest in the processes of amorphorisation and re-crystallisation together with the use of ion beams to perform in-situ tuning of quantum laser and detector devices. More information is available in individual departmental websites (see left) |
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Page last updated: 31 July 2007 Please direct all enquiries to: RSPhysSE Webmaster Page authorised by: Director, RSPhysSE |
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