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Commercial Services |
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MOCVD Growth |
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Custom growth of state of the art epitaxial wafers (2 inch and 3 inch) of III-V compound semiconductor structures based on GaAs/AlGaAs/InGaAs and InP/InGaAs/InGaAsP material systems is available.
For further information please contact: Dr. Hoe Tan or Prof. C. Jagadish.
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Ion Implantation |
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The Electronic Materials Engineering Department offers a broad range of commercial ion-implantation services. These are based on the Department's state-of-the-art accelerator facilities, including a 1.7 MV tandem accelerator for high energy ion-implantation. Samples can be heated or cooled during implantation (77 - 800 K).
For further information contact: Prof. Rob Elliman
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Device Processing |
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Custom processing of optoelectronic device structures is available.
For further information please contact: Dr. Hoe Tan or Prof. C. Jagadish.
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SIMS |
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A secondary ion mass spectrometer (quadrupole-type Riber MIQ256) is available for depth profiling of impurities and matrix elements in a variety of materials, from semiconductors to ceramics. Bombarding species include O, Ar, N or Cs ions at 1-15 keV and 0-60o impact. All elements, including H, are detectable with < 16 elements profiled simultaneously.
For further information please contact: Dr. Mladen Petravic
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Other Services |
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A wide variety of additional processing and analytical equipment is available for:
Processing (rapid thermal annealing, furnace annealing and oxidation, film deposition by evaporation and plasma-enhanced chemical vapour deposition)
Sample preparation (plan-view and cross-sectional samples for transmission electron microscopy)
Physical characterisation (Rutherford backscattering/channeling, x-ray diffraction, surface profilometry and hardness)
Electrical characterisation (four point probe, temperature-dependent Hall effect, deep-level transient spectroscopy, electrochemical carrier concentration profiling)
Thermal characterisation (differential scanning calorimetry)
For further information please contact: Dr. Mark Ridgway
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